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| IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS(R)2 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 34 27 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G Package Marking PG-TO263-3 35CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 27 20 108 47 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C I D=27 A, R GS=25 I D=27 A, V DS=80 V, di /dt =100 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 58 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150C and duty cycle D=0.01 for Vgs<-5V page 1 2006-06-02 Rev.1.02 IPB35CN10N G IPI35CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal resistance, junction ambient (TO251, TO252) R thJC R thJA minimal footprint 6 cm2 cooling area4) minimal footprint 6 cm2 cooling area4) - IPD33CN10N G IPU33CN10N G Unit max. IPP35CN10N G Values typ. 2.6 62 40 75 50 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=29 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=27 A, (TO252) V GS=10 V, I D=27 A, (TO251) V GS=10 V, I D=27 A, (TO263) V GS=10 V, I D=27 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=27 A 100 2 3 0.1 4 1 A V - 10 1 25 100 100 33 nA m - 25 33 - 25 35 15 26 1 30 35 S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 2 2006-06-02 IPB35CN10N G IPI35CN10N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) IPD33CN10N G IPU33CN10N G Unit max. IPP35CN10N G Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=27 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz - 1180 175 13 11 21 17 4 1570 233 20 17 31 25 6 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=27 A, V GS=0 to 10 V - 7 4 7 18 5.6 18 9 6 11 24 24 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=27 A, T j=25 C V R=50 V, I F=I S, di F/dt =100 A/s - 1 77 154 27 108 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev.1.02 page 3 2006-06-02 IPB35CN10N G IPI35CN10N G 1 Power dissipation P tot=f(T C) IPD33CN10N G IPU33CN10N G IPP35CN10N G 2 Drain current I D=f(T C); V GS10 V 60 30 40 20 P tot [W] 20 I D [A] 10 0 0 50 100 150 200 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 102 1 s 0.5 10 s 100 s 100 Z thJC [K/W] 0.2 0.1 0.05 0.02 I D [A] 101 DC 1 ms 10 ms 10-1 10 0 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev.1.02 page 4 2006-06-02 IPB35CN10N G IPI35CN10N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 150 10 V IPD33CN10N G IPU33CN10N G IPP35CN10N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 80 4.5 V 5V 5.5 V 8V 60 100 R DS(on) [m] I D [A] 7V 40 6V 50 6V 6.5 V 8V 10 V 20 5.5 V 5V 0 0 1 4.5 V 0 3 4 5 0 20 2 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 40 40 30 30 175 C 20 25 C g fs [S] 20 10 0 6 8 I D [A] 10 0 0 2 4 0 10 20 30 40 50 V GS [V] I D [A] Rev.1.02 page 5 2006-06-02 IPB35CN10N G IPI35CN10N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=27 A; V GS=10 V IPD33CN10N G IPU33CN10N G IPP35CN10N G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 80 4 3.5 60 3 2.5 98 % 29 A 290 A R DS(on) [m] 40 typ V GS(th) [V] 60 100 140 180 2 1.5 1 0.5 20 0 -60 -20 20 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 Ciss 103 Coss 102 175 C 25 C 175 C, 98% C [pF] 10 2 Crss I F [A] 101 101 25 C, 98% 100 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev.1.02 page 6 2006-06-02 IPB35CN10N G IPI35CN10N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 IPD33CN10N G IPU33CN10N G IPP35CN10N G 14 Typ. gate charge V GS=f(Q gate); I D=27 A pulsed parameter: V DD 12 50 V 10 20 V 8 80 V 10 100 C V GS [V] 1000 I AS [A] 25 C 6 150 C 4 2 1 1 10 100 0 0 5 10 15 20 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 115 V GS Qg 110 V BR(DSS) [V] 105 100 V g s(th) 95 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 90 T j [C] Rev.1.02 page 7 2006-06-02 IPB35CN10N G IPI35CN10N G PG-TO220-3: Outline IPD33CN10N G IPU33CN10N G IPP35CN10N G Rev.1.02 page 8 2006-06-02 IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G Rev.1.02 page 9 2006-06-02 IPB35CN10N G IPI35CN10N G PG-TO-263 (D-Pak) IPD33CN10N G IPU33CN10N G IPP35CN10N G Rev.1.02 page 10 2006-06-02 IPB35CN10N G IPI35CN10N G PG-TO252-3: Outline IPD33CN10N G IPU33CN10N G IPP35CN10N G Rev.1.02 page 11 2006-06-02 IPB35CN10N G IPI35CN10N G PG-TO251-3: Outline IPD33CN10N G IPU33CN10N G IPP35CN10N G Rev.1.02 page 12 2006-06-02 IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.02 page 13 2006-06-02 |
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